Guerrilla RF Unveils New Gallium Nitride (GaN) Dice for High-Performance RF Applications

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs

Guerrilla RF Unveils New Gallium Nitride (GaN) Dice for High-Performance RF Applications

Jim Ahne, Senior Vice President of Marketing
jahne@guerrilla-rf.com
+1 336 265 7760

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the

shape="rect">GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. These unmatched discrete transistors provide up to 50W of saturated power for customers within the wireless infrastructure, military, aerospace and industrial heating markets who are looking to integrate bare die within their own custom MMICs.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20250116273782/en/

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. (Graphic: Business Wire)

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN on SiC HEMT power amplifiers being developed by the company. (Graphic: Business Wire)

Each device offers exceptional flexibility, supporting either 50V or 28V supply rails while covering multiple octaves of operational bandwidth for continuous wave, linear, and pulsed modulation schemes. When using a 50V rail, the GRF0030D is rated for 50W (PSAT) operation from DC to 6GHz, with gain varying from 13.5dB to 23.7dB. The device also supports 28V operation while delivering up to 27.5W of saturated output power. Similarly, the GRF0020D variant provides up to 30W and 19W of saturated power when using 50V and 28V rails, respectively. This slightly lower power HEMT supports frequencies up to 7GHz while providing 13.8dB to 24.3dB of gain. As with all of Guerrilla RF’s bare die offerings, each device is 100% DC production tested to ensure KGD (known good die) compliance.

According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in 2022 to $2.7B by 2028. This growth is driven by expansion in key segments relevant to Guerrilla RF, including telecom infrastructure (5G and point-to-point systems), military, and satellite communications, with projected compound annual growth rates of 10%, 13%, and 18%, respectively. Additionally, GaN on SiC variants are expected to dominate the market for the next decade.

Ryan Pratt, CEO and founder of Guerrilla RF, commented, “GaN technology is critical for next-generation, high-performance, energy-efficient RF systems and devices. We’re already seeing strong demand for the GRF0020D and GRF0030D.” He added, “Another advantage is that these devices are fabricated in the U.S., aligning with the objectives of the CHIPS Act of 2022 and ensuring a robust, domestic supply chain for our customers.”

Product Availability

The GRF0020D and GRF0030D are now available for ordering, with samples ready for distribution. Pricing starts at $30 for 100-piece quantities. The bare dice are shipped in 2x2-inch waffle trays for safe transport and storage. Visit https://www.guerrilla-rf.com/products/detail/sku/0020D and https://www.guerrilla-rf.com/products/detail/sku/0030D for additional details pertaining to these two devices. To learn more about Guerrilla RF’s complete GaN portfolio, please visit www.guerrilla-rf.com/GaN .

About Guerrilla RF, Inc.

Founded in 2013, Guerrilla RF, Inc., develops and manufactures high-performance, state-of-the-art radio frequency (RF) and microwave semiconductors for wireless OEMs in multiple high-growth market segments, including network infrastructure for 5G/4G macro and small cell base stations, SATCOM, cellular repeaters/DAS, automotive telematics, military communications, navigation, and high-fidelity wireless audio. The Company has an extensive portfolio of 100+ high-performance RF and microwave semiconductor devices with 50+ new products in development. As one of the fastest-growing semiconductor firms in the industry, Guerrilla RF drives innovation through its R&D to commercialization initiatives and focuses on product excellence and custom solutions to underserved markets. The Company has shipped over 200 million devices and has repeatedly been included in Inc. Magazine’s annual "Inc. 5000" list. Guerrilla RF has made the top "Inc. 500" list for two years in a row. For more information, please visit https://guerrilla-rf.com or follow the Company on LinkedIn.

Forward-Looking Statements

This press release may contain forward-looking statements within the meaning of Section 21E of the Securities Exchange Act of 1934 and the Private Securities Litigation Reform Act of 1995, which statements are inherently subject to risks and uncertainties. Forward-looking statements include projections, predictions, expectations, or beliefs about future events or results or otherwise are not statements of historical fact. Such statements are often characterized by the use of qualifying words (and their derivatives) such as “expect,” “believe,” “estimate,” “plan,” “project,” “anticipate,” or other statements concerning opinions or judgments of the Company and its management about future events. You should not place undue reliance on forward-looking statements because they involve known and unknown risks, uncertainties, and assumptions that are difficult or impossible to predict and, in some cases, beyond the Company’s control. Actual results may differ materially from those in the forward-looking statements as a result of several factors, including those described in the Company’s filings with the SEC available at www.sec.gov. Forward-looking statements speak only as of the date they are made. The Company undertakes no obligation to revise or update information in this release to reflect events or circumstances in the future, even if new information becomes available.


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